Manufacturer Product Number:
IPB60R099P7ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB60R099P7ATMA1-DG
Description:
MOSFET N-CH 600V 31A D2PAK
Detailed Description:
N-Channel 600 V 31A (Tc) 117W (Tc) Surface Mount PG-TO263-3
Inventory:
39 Pcs New Original In Stock
13064148
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IPB60R099P7ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P7
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1952 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
117W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB60R099
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPB60R099P7ATMA1CT
IPB60R099P7ATMA1-ND
SP001664910
2156-IPB60R099P7ATMA1
IPB60R099P7
IPB60R099P7ATMA1TR
IPB60R099P7ATMA1DKR
IFEINFIPB60R099P7ATMA1
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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