IPB180P04P4L02ATMA1
Manufacturer Product Number:

IPB180P04P4L02ATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPB180P04P4L02ATMA1-DG

Description:

MOSFET P-CH 40V 180A TO263-7
Detailed Description:
P-Channel 40 V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3

Inventory:

12801245
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IPB180P04P4L02ATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Not For New Designs
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs
286 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
18700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB180

Datasheet & Documents

Additional Information

Other Names
IPB180P04P4L02ATMA1DKR
IPB180P04P4L02ATMA1TR
SP000709460
IPB180P04P4L02ATMA1CT
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
IPB180P04P4L02ATMA2
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
4559
DiGi PART NUMBER
IPB180P04P4L02ATMA2-DG
UNIT PRICE
1.74
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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