Manufacturer Product Number:
IMW65R027M1HXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMW65R027M1HXKSA1-DG
Description:
MOSFET 650V NCH SIC TRENCH
Detailed Description:
N-Channel 650 V 47A (Tc) 189W (Tc) Through Hole PG-TO247-3-41
Inventory:
501 Pcs New Original In Stock
12810867
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IMW65R027M1HXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolSIC™ M1
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
34mOhm @ 38.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 11mA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2131 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
189W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IMW65R027
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IMW65R027M1HXKSA1
SP005398440
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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