Manufacturer Product Number:
IMW120R045M1XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMW120R045M1XKSA1-DG
Description:
SICFET N-CH 1.2KV 52A TO247-3
Detailed Description:
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Inventory:
58 Pcs New Original In Stock
12800230
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IMW120R045M1XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolSiC™
Product Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IMW120
Datasheet & Documents
Datasheets
Additional Information
Other Names
IMW120R045M1XKSA1-DG
SP001346254
448-IMW120R045M1XKSA1
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
MSC025SMA120B
MANUFACTURER
Microchip Technology
QUANTITY AVAILABLE
30
DiGi PART NUMBER
MSC025SMA120B-DG
UNIT PRICE
28.12
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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