Manufacturer Product Number:
IMT65R030M1HXUMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMT65R030M1HXUMA1-DG
Description:
SILICON CARBIDE MOSFET
Detailed Description:
650 V Surface Mount PG-HSOF-8-1
Inventory:
1990 Pcs New Original In Stock
12989003
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IMT65R030M1HXUMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolSiC™
Product Status
Active
FET Type
-
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN
Additional Information
Other Names
448-IMT65R030M1HXUMA1DKR
448-IMT65R030M1HXUMA1TR
SP005716819
448-IMT65R030M1HXUMA1CT
Standard Package
2,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
100N03A
TO-252 MOSFETS ROHS
40N06
TO-252 MOSFETS ROHS
PSMQC040N10NS2_R2_00601
100V/ 4.4MOHM/ EXCELLECT LOW FOM
