Manufacturer Product Number:
IMBG120R350M1HXTMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMBG120R350M1HXTMA1-DG
Description:
SICFET N-CH 1.2KV 4.7A TO263
Detailed Description:
N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12
Inventory:
1518 Pcs New Original In Stock
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IMBG120R350M1HXTMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolSiC™
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Rds On (Max) @ Id, Vgs
468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id
5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 18 V
Vgs (Max)
+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 800 V
FET Feature
Standard
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-12
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
IMBG120
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IMBG120R350M1HXTMA1TR
448-IMBG120R350M1HXTMA1CT
SP004463802
448-IMBG120R350M1HXTMA1DKR
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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