Manufacturer Product Number:
IMBF170R650M1XTMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMBF170R650M1XTMA1-DG
Description:
SICFET N-CH 1700V 7.4A TO263-7
Detailed Description:
N-Channel 1700 V 7.4A (Tc) 88W (Tc) Surface Mount PG-TO263-7-13
Inventory:
1478 Pcs New Original In Stock
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IMBF170R650M1XTMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolSiC™
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Rds On (Max) @ Id, Vgs
650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id
5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 12 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
422 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-13
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
IMBF170
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IMBF170R650M1XTMA1CT
448-IMBF170R650M1XTMA1TR
448-IMBF170R650M1XTMA1DKR
SP002739686
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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