Manufacturer Product Number:
IGT60R190D1SATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IGT60R190D1SATMA1-DG
Description:
GANFET N-CH 600V 12.5A 8HSOF
Detailed Description:
N-Channel 600 V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
Inventory:
12800211
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IGT60R190D1SATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolGaN™
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960µA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
55.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN
Base Product Number
IGT60R190
Datasheet & Documents
Datasheets
Reliability Documents
Product Brief
Additional Information
Other Names
IGT60R190D1SATMA1DKR
2156-IGT60R190D1SATMA1-448
SP001701702
IGT60R190D1SATMA1CT
IGT60R190D1SATMA1TR
Standard Package
2,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IGT60R190D1ATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IGT60R190D1ATMA1-DG
UNIT PRICE
2.42
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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