IGLD60R190D1AUMA3
Manufacturer Product Number:

IGLD60R190D1AUMA3

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IGLD60R190D1AUMA3-DG

Description:

GAN HV
Detailed Description:
N-Channel 600 V 10A (Tc) 62.5W (Tc) Surface Mount PG-LSON-8-1

Inventory:

2344 Pcs New Original In Stock
12965865
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IGLD60R190D1AUMA3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolGaN™
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960µA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-LSON-8-1
Package / Case
8-LDFN Exposed Pad

Datasheet & Documents

Additional Information

Other Names
448-IGLD60R190D1AUMA3DKR
448-IGLD60R190D1AUMA3TR
448-IGLD60R190D1AUMA3CT
SP005557217
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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