FF6MR12W2M1PB11BPSA1
Manufacturer Product Number:

FF6MR12W2M1PB11BPSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

FF6MR12W2M1PB11BPSA1-DG

Description:

SIC 2N-CH 1200V 200A
Detailed Description:
Mosfet Array 1200V (1.2kV) 200A (Tj) Chassis Mount

Inventory:

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12822931
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FF6MR12W2M1PB11BPSA1 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolSiC™+
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Base Product Number
FF6MR12

Datasheet & Documents

Datasheets
FF6MR12W2M1P_B11

Additional Information

Other Names
448-FF6MR12W2M1PB11BPSA1
SP004134434
Standard Package
18

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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