Manufacturer Product Number:
FF6MR12KM1BOSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
FF6MR12KM1BOSA1-DG
Description:
SIC 2N-CH 1200V 250A AG-62MM
Detailed Description:
Mosfet Array 1200V (1.2kV) 250A (Tc) Chassis Mount AG-62MM
Inventory:
12954356
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FF6MR12KM1BOSA1 Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolSiC™
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
Rds On (Max) @ Id, Vgs
5.81mOhm @ 250A, 15V
Vgs(th) (Max) @ Id
5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-62MM
Base Product Number
FF6MR12
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001686408
2156-FF6MR12KM1BOSA1
448-FF6MR12KM1BOSA1
Standard Package
10
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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