Manufacturer Product Number:
DF11MR12W1M1B11BOMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
DF11MR12W1M1B11BOMA1-DG
Description:
SIC 2N-CH 1200V AG-EASY1BM-2
Detailed Description:
Mosfet Array 1200V (1.2kV) 50A Chassis Mount AG-EASY1BM-2
Inventory:
12799454
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
DF11MR12W1M1B11BOMA1 Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Infineon Technologies
Packaging
-
Series
-
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
50A
Rds On (Max) @ Id, Vgs
23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
3950pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1BM-2
Base Product Number
DF11MR12
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-DF11MR12W1M1B11BOMA1
INFINFDF11MR12W1M1B11BOMA1
SP001602238
Standard Package
24
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
Related Products
BSD840N L6327
MOSFET 2N-CH 20V 0.88A SOT363
BSO4804HUMA2
MOSFET 2N-CH 30V 8A 8DSO
BSD235C L6327
MOSFET N/P-CH 20V 0.95A SOT363
