Manufacturer Product Number:
BSZ086P03NS3EGATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
BSZ086P03NS3EGATMA1-DG
Description:
MOSFET P-CH 30V 13.5A/40A TSDSON
Detailed Description:
P-Channel 30 V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
Inventory:
6713 Pcs New Original In Stock
12853887
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BSZ086P03NS3EGATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs
57.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
4785 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8
Package / Case
8-PowerTDFN
Base Product Number
BSZ086
Datasheet & Documents
Datasheets
Additional Information
Other Names
BSZ086P03NS3E GCT-DG
BSZ086P03NS3EGATMA1DKR
BSZ086P03NS3EG
BSZ086P03NS3EGATMA1CT
BSZ086P03NS3E G-DG
SP000473016
BSZ086P03NS3E GDKR-DG
BSZ086P03NS3E G
BSZ086P03NS3E GCT
BSZ086P03NS3E GDKR
BSZ086P03NS3E GTR-DG
BSZ086P03NS3EGATMA1TR
Standard Package
5,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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