Manufacturer Product Number:
BSB012NE2LX
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
BSB012NE2LX-DG
Description:
MOSFET N-CH 25V 37A/170A 2WDSON
Detailed Description:
N-Channel 25 V 37A (Ta), 170A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Inventory:
12842946
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BSB012NE2LX Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
37A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 57W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Datasheet & Documents
Datasheets
Additional Information
Other Names
BSB012NE2LXCT
BSB012NE2LXXUMA1
BSB012NE2LXDKR
BSB012NE2LX-DG
BSB012NE2LXXT
BSB012NE2LXTR
SP000756344
Standard Package
5,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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