Manufacturer Product Number:
RFL1N12
Product Overview
Manufacturer:
Harris Corporation
DiGi Electronics Part Number:
RFL1N12-DG
Description:
N-CHANNEL POWER MOSFET
Detailed Description:
N-Channel 120 V 1A (Tc) 8.33W (Tc) Through Hole TO-205AF (TO-39)
Inventory:
845 Pcs New Original In Stock
12938274
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RFL1N12 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-RFL1N12
HARHARRFL1N12
Standard Package
342
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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