Manufacturer Product Number:
RFD3N08L
Product Overview
Manufacturer:
Harris Corporation
DiGi Electronics Part Number:
RFD3N08L-DG
Description:
N-CHANNEL POWER MOSFET
Detailed Description:
N-Channel 80 V 3A (Tc) 30W (Tc) Through Hole I-PAK
Inventory:
1346 Pcs New Original In Stock
12938598
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RFD3N08L Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
800mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±10V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-RFD3N08L
HARHARRFD3N08L
Standard Package
951
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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