Manufacturer Product Number:
GT105N10T
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GT105N10T-DG
Description:
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Detailed Description:
N-Channel 100 V 55A (Tc) 74W (Tc) Through Hole TO-220
Inventory:
189 Pcs New Original In Stock
13000955
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GT105N10T Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
SGT
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±20V
FET Feature
Standard
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GT105N10T
4822-GT105N10T
Standard Package
100
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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