Manufacturer Product Number:
GT100N12M
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GT100N12M-DG
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Detailed Description:
N-Channel 120 V 70A (Tc) 100W (Tc) Surface Mount TO-263
Inventory:
733 Pcs New Original In Stock
12986406
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GT100N12M Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
SGT
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3050 pF @ 60 V
FET Feature
Standard
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GT100N12MCT
3141-GT100N12MDKR
4822-GT100N12MTR
3141-GT100N12MTR
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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