Manufacturer Product Number:
GT025N06AM6
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GT025N06AM6-DG
Description:
N60V,170A,RD<2.0M@10V,VTH1.2V~2.
Detailed Description:
N-Channel 60 V 170A (Tc) 215W (Tc) Surface Mount TO-263-6
Inventory:
13004201
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GT025N06AM6 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5058 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
215W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-6
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GT025N06AM6TR
Standard Package
800
Environmental & Export Classification
RoHS Status
RoHS Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0000
DIGI Certification
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