Manufacturer Product Number:
GC11N65M
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GC11N65M-DG
Description:
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Detailed Description:
N-Channel 650 V 11A (Tc) 78W (Tc) Surface Mount TO-263
Inventory:
775 Pcs New Original In Stock
13000379
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
GC11N65M Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
Cool MOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
768 pF @ 50 V
FET Feature
Standard
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GC11N65MDKR
4822-GC11N65MTR
3141-GC11N65MTR
3141-GC11N65MCT
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SQJA72EP-T1_BE3
N-CHANNEL 100-V (D-S) 175C MOSFE
G2012
MOSFET N-CH 20V 12A DFN2*2-6L
SIHD14N60ET1-GE3
N-CHANNEL 600V