Manufacturer Product Number:
GC041N65QF
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
GC041N65QF-DG
Description:
MOSFET N-CH 650V 70A TO-247
Detailed Description:
N-Channel 650 V 70A (Tc) 500W (Tc) Through Hole TO-247
Inventory:
30 Pcs New Original In Stock
13002657
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GC041N65QF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7650 pF @ 380 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-GC041N65QF
Standard Package
30
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0000
DIGI Certification
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