G10N10A
Manufacturer Product Number:

G10N10A

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

G10N10A-DG

Description:

N100V,RD(MAX)130MOHM@10V,TO-252
Detailed Description:
N-Channel 100 V 10A (Tc) 28W (Tc) Surface Mount TO-252

Inventory:

4794 Pcs New Original In Stock
12986870
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G10N10A Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
130mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 25 V
FET Feature
Standard
Power Dissipation (Max)
28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet & Documents

Datasheets

Additional Information

Other Names
4822-G10N10ATR
3141-G10N10ADKR
3141-G10N10ACT
3141-G10N10ATR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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