FQP3N80C
Manufacturer Product Number:

FQP3N80C

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FQP3N80C-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 3
Detailed Description:
N-Channel 800 V 3A (Tc) 107W (Tc) Through Hole TO-220-3

Inventory:

53553 Pcs New Original In Stock
12946802
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FQP3N80C Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

Datasheet & Documents

Datasheets
Datasheet

Additional Information

Other Names
2156-FQP3N80C
FAIFSCFQP3N80C
Standard Package
401

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
fairchild-semiconductor

FDB86102LZ

POWER FIELD-EFFECT TRANSISTOR, 8

fairchild-semiconductor

FQA27N25

POWER FIELD-EFFECT TRANSISTOR, 2

fairchild-semiconductor

FDS8672S

SMALL SIGNAL FIELD-EFFECT TRANSI

international-rectifier

AUIRF3205ZS

MOSFET N-CH 55V 75A D2PAK