Manufacturer Product Number:
FQI10N60CTU
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FQI10N60CTU-DG
Description:
MOSFET N-CH 600V 9.5A I2PAK
Detailed Description:
N-Channel 600 V 9.5A (Tc) 3.13W (Ta), 156W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
55208 Pcs New Original In Stock
13075926
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FQI10N60CTU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Tube
Series
QFET®
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
FAIFSCFQI10N60CTU
2156-FQI10N60CTU-FS
Standard Package
333
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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