Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
Canada
Sign in
Selective Language
Current language of your choice:
Canada
Switch:
English
Europe
United Kingdom
DR Congo
Argentina
Turkey
Romania
Lithuania
Norway
Austria
Angola
Slovakia
ltaly
Finland
Belarus
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Montenegro
Russian
Belgium
Sweden
Serbia
Basque
Iceland
Bosnia
Hungarian
Moldova
Germany
Netherlands
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
France
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Portugal
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Spain
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
FDS6612A
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDS6612A-DG
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Detailed Description:
N-Channel 30 V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Inventory:
141427 Pcs New Original In Stock
12946380
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
FDS6612A Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Datasheet & Documents
Datasheets
Datasheet
Additional Information
Other Names
2156-FDS6612AND
FAIFSCFDS6612A
Standard Package
917
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
FDU6N50TU
MOSFET N-CH 500V 6A I-PAK
BUK962R6-40E,118
MOSFET N-CH 40V 100A D2PAK
AUIRLU3114Z
AUIRLU3114Z - 20V-40V N-CHANNEL
AUIRFR8405TRL
MOSFET N-CH 40V 100A DPAK