Manufacturer Product Number:
FDP100N10
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDP100N10-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 7
Detailed Description:
N-Channel 100 V 75A (Tc) 208W (Tc) Through Hole TO-220-3
Inventory:
2970 Pcs New Original In Stock
12947141
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FDP100N10 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FDP100N10
ONSONSFDP100N10
Standard Package
159
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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