FDMS4435BZ
Manufacturer Product Number:

FDMS4435BZ

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FDMS4435BZ-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 9
Detailed Description:
P-Channel 30 V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6)

Inventory:

1500 Pcs New Original In Stock
12946810
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDMS4435BZ Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN

Datasheet & Documents

Datasheets
FDMS4435BZ Datasheet

Additional Information

Other Names
ONSONSFDMS4435BZ
2156-FDMS4435BZ
Standard Package
532

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
fairchild-semiconductor

FQD1N60CTM

POWER FIELD-EFFECT TRANSISTOR, 1

fairchild-semiconductor

FDD6688

MOSFET N-CH 30V 84A DPAK

fairchild-semiconductor

FDPF5N50NZ

POWER FIELD-EFFECT TRANSISTOR, 4

international-rectifier

IRF3703PBF

IRF3703 - 12V-300V N-CHANNEL POW