Manufacturer Product Number:
FDI038AN06A0
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FDI038AN06A0-DG
Description:
MOSFET N-CH 60V 17A/80A I2PAK
Detailed Description:
N-Channel 60 V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
2232 Pcs New Original In Stock
12947643
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
FDI038AN06A0 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
124 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
310W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
FAIFSCFDI038AN06A0
2156-FDI038AN06A0
Standard Package
102
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
CMS100N04H8-HF
MOSFET N-CH 40V 100A DFN5X6
PMCM6501VNEZ
PMCM6501VNE - 12V, N-CHANNEL TRE
HUF75545P3
N-CHANNEL ULTRAFET POWER MOSFET
