Manufacturer Product Number:
EPC2110
Product Overview
Manufacturer:
EPC
DiGi Electronics Part Number:
EPC2110-DG
Description:
GANFET 2N-CH 120V 3.4A DIE
Detailed Description:
Mosfet Array 120V 3.4A Die
Inventory:
14435 Pcs New Original In Stock
12795187
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
EPC2110 Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
EPC
Packaging
Tape & Reel (TR)
Series
eGaN®
Product Status
Active
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Dual) Common Source
FET Feature
-
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
3.4A
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Supplier Device Package
Die
Base Product Number
EPC211
Datasheet & Documents
Datasheets
Additional Information
Other Names
917-1152-6
917-1152-2
917-1152-1
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040
DIGI Certification
Related Products
EPC2107
GANFET 3 N-CH 100V 9BGA
EPC2111
GANFET 2N-CH 30V 16A DIE
EPC2103
GANFET 2N-CH 80V 28A DIE
