DRDNB26W-7
Manufacturer Product Number:

DRDNB26W-7

Product Overview

Manufacturer:

Diodes Incorporated

DiGi Electronics Part Number:

DRDNB26W-7-DG

Description:

TRANS PREBIAS NPN 50V SOT363
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50 V 600 mA 200 MHz 200 mW Surface Mount SOT-363

Inventory:

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DRDNB26W-7 Technical Specifications

Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Diodes Incorporated
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
220 Ohms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Base Product Number
DRDNB26

Datasheet & Documents

Datasheets
DRDNB26W-7

Additional Information

Other Names
DRDNB26W7
DRDNB26WDIDKR
DRDNB26WDITR
DRDNB26WDICT
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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